PART |
Description |
Maker |
WMS512K8L-25FQA WMS512K8-25FQA WMS512K8L-45DEC WMS |
512Kx8 MONOLITHIC SRAM, SMD 5962-95613
|
White Electronic Designs Co... White Electronic Design...
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EDI88512CA EDI88512LPAXCB EDI88512LPAXCC EDI88512L |
512Kx8 Monolithic SRAM, SMD 5962-95600
|
WEDC[White Electronic Designs Corporation]
|
EDI88512LPAXN36M EDI88512CAXNC EDI88512LPAXNI EDI8 |
512Kx8 Monolithic SRAM, SMD 5962-95600
|
http://
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WMF512K8-70CLM5 WMF512K8-70CLI5 WMF512K8-150CM5A W |
512Kx8 MONOLITHIC FLASH, SMD 5962-96692 512Kx8 MONOLITHIC FLASH, SMD 5962-96692
|
White Electronic Design...
|
KM23V4000D |
4M-Bit (512Kx8) CMOS Mask ROM(4M(512Kx8) CMOS掩膜ROM) 4分位512Kx8)的CMOS掩模ROM分位512Kx8)的CMOS掩膜光盘
|
Samsung Semiconductor Co., Ltd.
|
WMS512K8L-100DEIE WMS512K8L-100DEIEA WMS512K8L-120 |
100ns; 512K x 8 monolithic SRAM, SMD 5962-95613 120ns; 512K x 8 monolithic SRAM, SMD 5962-95613 70ns; 512K x 8 monolithic SRAM, SMD 5962-95613 85ns; 512K x 8 monolithic SRAM, SMD 5962-95613
|
White Electronic Designs
|
BS62LV4008 BS62LV4008TI BS62LV4008TC BS62LV4008STC |
From old datasheet system Asynchronous 4M(512Kx8) bits Static RAM Very Low Power/Voltage CMOS SRAM 512K X 8 bit 非常低功电压CMOS SRAM的为512k × 8
|
BSI[Brilliance Semiconductor] BRILLIANCE SEMICONDUCTOR, INC. Brilliance Semiconducto...
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ACT-PS512K8 ACT-9S512K8N-010L2I ACT-9S512K8N-010L2 |
ACT-PS512K8 High Speed 4 Megabit Plastic Monolithic SRAM 16-Bit Delta-Sigma ADC with internal reference, PGA and oscillator. I2C Serial Interface 6-SOT-23 512K X 8 CACHE SRAM, 17 ns, PDSO36 0.930 X 0.405 INCH, 0.148 INCH HEIGHT, PLASTIC, SOJ-36 512K X 8 CACHE SRAM, 25 ns, PDSO36 0.930 X 0.405 INCH, 0.148 INCH HEIGHT, PLASTIC, SOJ-36 ACT-PS512K8 High Speed 4 Megabit Plastic Monolithic SRAM 行为PS512K8高兆位单片SRAM的塑 512K X 8 CACHE SRAM, 15 ns, PDSO36 512K X 8 CACHE SRAM, 20 ns, PDSO36
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AEROFLEX[Aeroflex Circuit Technology] Aeroflex Inc. Aeroflex, Inc. Aeroflex Circuit Techno...
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WMS128K8V-17 WMS128K8V-35 WMS128K8V-20DRMA WMS128K |
128Kx8 3.3V Monolithic SRAM(128Kx8,3.3V,单片静态RAM(存取时7ns 128Kx8 3.3单片的SRAM28Kx83.3伏,单片静态随机存储器(存取时间为35ns)) 128K X 8 STANDARD SRAM, 20 ns, CDSO32 CERAMIC, SOJ-32 128K X 8 STANDARD SRAM, 15 ns, CDFP32 CERAMIC, DFP-32 128K X 8 STANDARD SRAM, 15 ns, CDSO32 CERAMIC, SOJ-32 128K X 8 STANDARD SRAM, 17 ns, CDIP32 SINGLE CAVITY, SIDE BRAZED, CERAMIC, DIP-32 128K X 8 STANDARD SRAM, 20 ns, CDFP32
|
White Electronic Designs Corporation White Electronic Designs, Corp.
|
BS62LV4007 BS62LV4007TIP70 BS62LV4007EC BS62LV4007 |
Asynchronous 4M(512Kx8) bits Static RAM High Conductance Low Leakage Diode; Package: DO-35; No of Pins: 2; Container: Tape & Reel surface mount silicon Zener diodes Very Low Power/Voltage CMOS SRAM 512K X 8 bit 非常低功电压CMOS SRAM的为512k × 8
|
BSI[Brilliance Semiconductor] BRILLIANCE SEMICONDUCTOR, INC.
|
EDI8832C70CB EDI8832C70LB EDI8832C70QB EDI8832C120 |
High Performance 256K Monolithic SRAM
|
Electronic devices inc.
|
MSM832T MSM832S MSM832V MSM832W |
(MSM832x) 32K x 8 Monolithic CMOS SRAM
|
Hybrid Memory Products
|